* PIN-Diode Models from Infineon * * BA592, BA892, BAT18 single diode * BAR88_02V single diode * BAR15_0 pseudo single BAR14,15,16 * BAR15_1 2 diodes with common cathode * * http://www.infineon.com/cmc_upload/0/000/011/828/appli034.pdf * .SUBCKT BA592 100 200 LAO 10 100 0.65nH ; LAO CAC 10 20 120fF ; CAC LAI 1 10 0.76nH ; LAI LCO 20 200 0.60nH ; LCO D1 1 20 D194 .ENDS .SUBCKT BA892 100 200 LAO 10 100 0.15nH ; LAO CAC 10 20 90fF ; CAC LAI 1 10 0.45nH ; LAI LCO 20 200 0.10nH ; LCO D1 1 20 D194 .ENDS .SUBCKT BAT18 100 200 LAO 10 100 0.63nH ; LAO CAC 10 20 140fF ; CAC LAI 1 10 0.67nH ; LAI LCO 20 200 0.51nH ; LCO D1 1 20 D194 .ENDS .SUBCKT BAR88_02V 100 200 LAO 10 100 0.15nH ; LAO CAC 10 20 90fF ; CAC LAI 1 10 0.45nH ; LAI LCO 20 200 0.10nH ; LCO D1 1 20 D0391 .ENDS * A pseudo single BAR14,15,16 .SUBCKT BAR15_0 100 300 L1I 1 10 0.50nH ; L1I *L2I 2 20 0.50nH ; L2I *C12 10 20 61fF ; C12 C13 3 10 140fF ; C13 *C23 3 20 140fF ; C23 L1O 10 100 0.45nH ; L1O *L2O 20 200 0.45nH ; L2O L3O 3 300 0.41nH ; L3O D1 1 3 D148 *D2 2 3 D148 .ENDS .SUBCKT BAR15_1 18 100 200 300 L1I 1 10 0.50nH ; L1I L2I 2 20 0.50nH ; L2I C12 10 20 61fF ; C12 C13 3 10 140fF ; C13 C23 3 20 140fF ; C23 L1O 10 100 0.45nH ; L1O L1O 20 200 0.45nH ; L2O L3O 3 300 0.41nH ; L3O D1 1 3 D148 D2 2 3 D148 .ENDS ***************************************************************** * INFINEON technologies * * RF & Discrete Semiconductors * * PIN DIODE SPICE ( DIODE CHIP ONLY ) * * * * Version: 6 * * Date: November 2000 * ***************************************************************** .MODEL D194 D(IS=185F RS=.30 N=1.305 BV=70 IBV=.1N + CJO=1.17P VJ=.12 M=.096 TT=125n) * 03.10.2000 INFINEON TECHNOLOGIES ***************************************************************** ***************************************************************** * INFINEON technologies * * RF & Discrete Semiconductors * * PIN DIODE SPICE ( DIODE CHIP ONLY ) * * * * Version: 6 * * Date: April 2002 * ***************************************************************** .MODEL D148 D(IS=38n RS=.30 N=1.948 Rs=0.8 BV=100 IBV=100u *+ CJO=0.368P VJ=1.1 M=0.284 TT=125n) * TT changed to 1u, Helmut + CJO=0.368P VJ=1.1 M=0.284 TT=1.0u) * For Aplac Simulation * RMIN=1 RMAX=3585 IS=38n N=1.948 * +A=0.156 K=0.822 TT=1.0u C=0.368p L=.8n * 03.05.2002 INFINEON TECHNOLOGIES ***************************************************************** ***************************************************************** * Infineon Technologies AG * * RF & Discrete Semiconductors * * SPICE2G6 Model for PIN Diode BAR88... (Chip only) * * * * Version: 1 * * Date: July 2002 A. Boehme * ***************************************************************** .MODEL D0391 D(IS=100E-18 IKF=70E-3 CJO=350E-15 M=.1 VJ=.224 + ISR=100E-12 BV=80 IBV=5E-6 TT=500E-9) **************************************************************** * INFINEON TECHNOLOGIES AG * RF-PACKAGE EQUIVALENT CIRCUIT * VALID UP TO 6 GHZ * >>> SOD123 <<< (RF-DIODE-PACKAGE) * FILENAME: SOD123.TXT * (C) 2001 INFINEON TECHNOLOGIES AG * Version 1.2 June 2001 A.Boehme **************************************************************** * * CAC * (10) | | (20) * +------------| |------------+ * | | | | * LAO | | LCO * A---LLL--+ +--LLL---C * (100) | | (200) * | LAI | * +--LLL---A' CHIP C'--------+ * (1) (2) * *BLK * IND 1 10 L=0.76nH ; LAI * CAP 10 20 C=120fF ; CAC * IND 10 100 L=0.65nH ; LAO * IND 20 200 L=0.60nH ; LCO * PACK: 4POR 1 2 100 200 * * A' C' A C *END **************************************************************** * PACK = NAME OF PACKAGE BLOCK, DEFINED AS 4-PORT * 1 = ANODE OF CHIP * 2 = CATHODE OF CHIP * 100 = ANODE OF COMPLETE DIODE IN PACKAGE * 200 = CATHODE OF COMPLETE DIODE IN PACKAGE * * Add Spice model or discrete equivalent circuit for chip * between terminals (1) and (2) **************************************************************** *************************************************************** * INFINEON TECHNOLOGIES AG * RF-PACKAGE EQUIVALENT CIRCUIT * VALID UP TO 6 GHZ * >>> SCD80 <<< (RF-DIODE-PACKAGE) * FILENAME: SCD80.TXT * (C) 2001 INFINEON TECHNOLOGIES AG * Version 1.1 June 2001 P. Moschovis *************************************************************** * * CAC * (10) | | (20) * +------------| |------------+ * | | | | * LAO | | LCO * A---LLL--+ +--LLL---C * (100) | | (200) * | LAI | * +--LLL---A' CHIP C'--------+ * (1) (2) * *BLK * IND 1 10 L=0.45nH ; LAI * CAP 10 20 C=90fF ; CAC * IND 10 100 L=0.15nH ; LAO * IND 20 200 L=0.1nH ; LCO * PACK: 4POR 1 2 100 200 * * A' C' A C *END *************************************************************** * PACK = NAME OF PACKAGE BLOCK * 1 = ANODE OF CHIP * 2 = CATHODE OF CHIP * 100 = ANODE OF COMPLETE DIODE IN PACKAGE * 200 = CATHODE OF COMPLETE DIODE IN PACKAGE * * Add Spice model or discrete equivalent circuit for chip * between terminals (1) and (2) *************************************************************** *************************************************************** * INFINEON TECHNOLOGIES AG * RF-PACKAGE EQUIVALENT CIRCUIT * VALID UP TO 6 GHZ * >>> SINGLE DIODES in SOT23 <<< * FILENAME: SOT23_1.TXT * (C) 2001 INFINEON TECHNOLOGIES AG * Version 1.1 June 2001 P. Moschovis *************************************************************** * * CAC * (10) | | (20) * +------------| |------------+ * | | | | * LAO | | LCO * A---LLL--+ +--LLL---C * (100) | | (200) * | LAI | * +--LLL---A' CHIP C'--------+ * (1) (20) * *BLK * IND 1 10 L=0.67nH ; LAI * CAP 10 20 C=140fF ; CAC * IND 10 100 L=0.63nH ; LAO * IND 20 200 L=0.51nH ; LCO * PACK: 4POR 1 20 100 200 * * A' C' A C *END *************************************************************** * PACK = NAME OF PACKAGE BLOCK * 1 = ANODE OF CHIP * 2 = CATHODE OF CHIP * 100 = ANODE OF COMPLETE DIODE IN PACKAGE * 200 = CATHODE OF COMPLETE DIODE IN PACKAGE * * Add Spice model or discrete equivalent circuit for chip * between terminals (1) and (2) *************************************************************** * BAR14_1 *************************************************************** * INFINEON TECHNOLOGIES AG * RF-PACKAGE EQUIVALENT CIRCUIT * VALID UP TO 6 GHZ * >>> DUAL DIODES in SOT323 <<< * FILENAME: SOT323_2.TXT * (C) 2001 INFINEON TECHNOLOGIES AG * Version 1.1 June 2001 P. Moschovis *************************************************************** * * C12 * (10) | | (20) * +------------| |------------+ * | | | | * L1O | L1I (1) (2) L2I | L2O * A1---LLL--+--LLL---A1' A2'---LLL--+--LLL---A2 * (100) | CHIPS | (200) * | | * ----- C' ----- * ----- C13 | ----- C23 * | |(3) | * +-------------+-------------+ * | * L * L L3O * | * C (300) * *BLK * IND 1 10 L=0.50nH ; L1I * IND 2 20 L=0.50nH ; L2I * CAP 10 20 C=61fF ; C12 * CAP 3 10 C=140fF ; C13 * CAP 3 20 C=140fF ; C23 * IND 10 100 L=0.45nH ; L1O * IND 20 200 L=0.45nH ; L2O * IND 3 300 L=0.41nH ; L3O * PACK: 6POR 1 2 3 100 200 300 * * A1' A2' C' A1 A2 C *END *************************************************************** * PACK = NAME OF PACKAGE BLOCK * 1 = ANODE1 * 2 = ANODE2 * 3 = CATHODES * 100 = ANODE1 OF COMPLETE DIODE IN PACKAGE * 200 = ANODE2 OF COMPLETE DIODE IN PACKAGE * 300 = CATHODES OF COMPLETE DIODE IN PACKAGE * * Add Spice model or discrete equivalent circuit for chip * between terminals (1) and (3) respectively (2) and (3) ***************************************************************