*POLYFET RF DEVICES
*08/19/98
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*VG=2.63 ID=681ma
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
* S1A 3 DIE; SD703, SR703, SH703
*                 D  G  S
.SUBCKT  S1A3/PF 20 10 30
LGATE 10  11     0.524N
RGATE 11  12     0.424
CG    10  30     0.24P
CRSS  12  17     11.73P
CISS  12  14     113.8P
LS    14  30     0.1N
CS    14  30     0.068P
LD    17  20     0.832N
CD    20  30     0.154P
R_RC  16  17     7.8
C_RC  14  16     37P
MOS   13  12  14  14     S1A3MOS  L=1.1U W= 0.249 ;D G S B LEVEL1
JFET  17  14  13         S1A3JF		   ;D G S
DBODY 14  17             S1A3DB		   ;P N

.MODEL   S1A3MOS NMOS(VTO=2.3  KP=2.2E-5 LAMBDA=0.5 RD= 0.09 RS= 0.11)
.MODEL   S1A3JF  NJF (VTO=-6.8 BETA=0.5 LAMBDA=1)
.MODEL   S1A3DB  D   (CJO=280.0P  RS=0.25 VJ=0.7 M=0.3 BV= 65.0)
.ENDS
*$