*POLYFET RF DEVICES 
*OCT 20 1998
*PHONE:(805)484-4210; FAX:(805)484-3393  CONTACT:MR. S.K. LEONG
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET
*TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.25V FOR IDQ=205MA
*MODEL APPLICABLE FOR ALL S2A 1 DIE IN AP, AK, AQ AND CC PACKAGE.
*  NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER
				( ;D  G  S )
.SUBCKT SQ201/PF  20  10  30
LG     10  11  1.25N
RGATE  11  12  5.27
CG     10  30  0.47P
CRSS   12  17  0.64P
CISS   12  14  12.8P
LS     14  30  0.35N
CS     14  30  0.05P
LD     17  20  0.75N
CD     20  30  0.11P
R_RC   16  17  124.5
C_RC   14  16  1.7P
MOS    13  12  14  14 SQ201MOS L=1.1E-6 W=0.0125     ;D G S B LEVEL1
JFET   17  14  13     SQ201JF                      ;D G S
DBODY  14  17         SQ201DB                      ;P N
 
.MODEL SQ201MOS NMOS (VTO=2.2 KP=2.2E-5 LAMBDA=0.5 RD=2.2 RS=1.9)
.MODEL SQ201JF  NJF  (VTO=-6.8 BETA=0.3 LAMBDA=1)
.MODEL SQ201DB  D    (CJO=19P RS=0.25 VJ=0.7 M=0.3 BV=65)
.ENDS
*$