*POLYFET RF DEVICES
*10/22/97 RENAME L88013  TO LQ801
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
*Frequency range model valid for 50Mhz - 1200 Mhz
*Vg=3.0V; Id=100.25ma
*                  D  G  S
.SUBCKT  LQ801/PF 20 10 30
LGATE 10  11     0.631N
RGATE 11  12     0.396
CG    10  30     2.411P
CRSS  12  17     1.084P
CISS  12  14     30.45P
LS    14  30     0.057N
CS    14  30     1.882P
LD    17  20     0.807N
CD    20  30     2.493P
R_RC  16  17     1255.8
C_RC  14  16     108.4P
MOS   13  12  14  14     LQ801MOS  L=1.5U W= 0.04 ;D G S B LEVEL1
JFET  17  14  13         LQ801JF		   ;D G S
DBODY 14  17             LQ801DB		   ;P N 

.MODEL   LQ801MOS NMOS(VTO=2.4  KP=1.25E-5 LAMBDA=0.15 RD= 0.25 RS= 0.5)
.MODEL   LQ801JF  NJF (VTO=-6.8 BETA=0.2 LAMBDA=5)
.MODEL   LQ801DB  D   (CJO=57.0P  RS=0.25 VJ=.4 M=0.4 BV= 65.0)
.ENDS
*$