*POLYFET RF DEVICES
*04/07/99
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
* LP821
* VG=3.0 ID=107.06MA
*                 D  G  S
.SUBCKT  L2C1/PF 20 10 30
LGATE 10  11     0.867N
RGATE 11  12     0.01
CG    10  30     3.5P
CRSS  12  17     4.5P
CISS  12  14     22.1P
LS    14  30     0.108N
CS    14  30     0.43P
LD    17  20     0.51N
CD    20  30     0.01P
R_RC  16  17     1989
C_RC  14  16     381P
MOS   13  12  14  14     L2C1MOS  L=1.0U W= 0.04 ;D G S B LEVEL1
JFET  17  14  13         L2C1JF		   ;D G S
DBODY 14  17             L2C1DB		   ;P N

.MODEL   L2C1MOS NMOS(VTO=2.4  KP=0.9E-5 LAMBDA=0.15 RD= 0.16 RS= 0.16)
.MODEL   L2C1JF  NJF (VTO=-5.25 BETA=6 LAMBDA=0.9)
.MODEL   L2C1DB  D   (CJO=60.0P  RS=0.25 VJ=0.6 M=0.25 BV=45.0)
.ENDS
*$