*POLYFET RF DEVICES
*10/26/01
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
* L8821P
* VG=3.0 ID=107.06MA
*                 D  G  S
.SUBCKT  L2C1/PF 20 10 30
LGATE 10  11     0.71N
RGATE 11  12     1.2
CG    10  30     1.5P
CRSS  12  17     3.54P
CISS  12  14     35.8P
LS    14  30     0.76N
CS    14  30     0.03P
LD    17  20     0.75N
CD    20  30     0.09P
R_RC  16  17     227000
C_RC  14  16     252P
MOS   13  12  14  14     L2C1MOS  L=1.5U W= 0.04 ;D G S B LEVEL1
JFET  17  14  13         L2C1JF		   ;D G S
DBODY 14  17             L2C1DB		   ;P N

.MODEL   L2C1MOS NMOS(VTO=2.4  KP=1.25E-5 LAMBDA=0.15 RD= 0.2 RS= 0.3)
.MODEL   L2C1JF  NJF (VTO=-6.8 BETA=0.2 LAMBDA=5)
.MODEL   L2C1DB  D   (CJO=50.0P  RS=0.25 VJ=0.6 M=0.35 BV= 60.0)
.ENDS
*$