*POLYFET RF DEVICES
*11/01/01
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
*Vg=3.57 Id=818ma
*                   D  G  S
.SUBCKT  F2212/PF 20 10 30
LGATE 10  11     0.7N
RGATE 11  12     0.63
CG    10  30     0.77P
CRSS  12  17     7.0P
CISS  12  14     35.0P
LS    14  30     0.13N
CS    14  30     1.0P
LD    17  20     1.1N
CD    20  30     0.1P
R_RC  16  17     53.0
C_RC  14  16     6.0P
MOS   13  12  14  14    F2212MOS  L=1.1U W= 5.0  ;D G S B LEVEL1
JFET  17  14  13        F2212JF		   ;D G S
DBODY 14  17            F2212DB		   ;P N

.MODEL  F2212MOS NMOS(VTO=2.0  KP=1.30E-5 LAMBDA=0.1 RD= 0.20 RS= 0.32)
.MODEL  F2212JF  NJF (VTO=-6.8 BETA=0.2 LAMBDA=5)
.MODEL  F2212DB  D   (CJO= 56.0P  RS=0.25 VJ=0.7 M=0.35 BV= 40.0)
.ENDS
*$